BSS306N optimos ? 2 small-signal-transistor features ? n-channel ? enhancement mode ? logic level (4.5v rated) ? avalanche rated ? qualified according to aec q101 ? 100% lead-free; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 2.3 a t a =70 c 1.8 pulsed drain current i d,pulse t a =25 c 9 avalanche energy, single pulse e as i d =2.3 a, r gs =25 10.8 mj reverse diode d v /d t d v /d t i d =2.3 a, v ds =16 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t a =25 c w operating and storage temperature t j , t stg -55 ... 150 c esd class jesd22-a114 -hbm 0 (<250v) soldering temperature 260 c iec climatic category; din iec 68-1 55/150/56 value 0.5 pg-sot23 3 1 2 type package tape and reel information marking lead free packing BSS306N sot23 h6327: 3000 pcs/ reel sws yes non dry v ds 30 v r ds(on),max v gs =10 v 57 m v gs =4.5 v 93 i d 2.3 a product summary product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
BSS306N parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint 1) - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 30 - - v gate threshold voltage v gs(th) v ds =v gs , i d =11 a 1.2 1.6 2 drain-source leakage current i dss v ds =30 v, v gs =0 v, t j =25 c --1 a v ds =30 v, v gs =0 v, t j =150 c - - 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =1.85 a -6793 m v gs =10 v, i d =2.3 a -4457 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =1.8 a -5-s values 1) performed on 40mm 2 fr4 pcb. the traces are 1mm wide, 70 m thick and 20mm long; they are on both sides of the pcb. product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
BSS306N parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 207 275 pf output capacitance c oss - 75 100 reverse transfer capacitance c rss -1217 turn-on delay time t d(on) - 4.4 - ns rise time t r - 2.3 - turn-off delay time t d(off) - 8.3 - fall time t f - 1.4 - gate charge characteristics gate to source charge q gs - 0.65 - nc gate to drain charge q gd - 0.45 - gate charge total q g - 1.5 - gate plateau voltage v plateau - 3.1 - v reverse diode diode continous forward current i s - - 0.5 a diode pulse current i s,pulse --9 diode forward voltage v sd v gs =0 v, i f =2.3 a, t j =25 c - 0.83 1.1 v reverse recovery time t rr - 14.4 - ns reverse recovery charge q rr - 2.9 - nc v r =10 v, i f =2.3 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =2.3 a, r g =6 v dd =15 v, i d =2.3 a, v gs =0 to 5 v product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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